Optics.org: MIT Media Lab researches propose a new optics for fast cameras, say it adds new capabilities:
IEDM 2018 to be held on Dec. 1-5 in San Francisco publishes a list of accepted papers with an interesting image sensor stuff: High Performance 2.5um Global Shutter Pixel with New Designed Light-Pipe Structure Toshifumi Yokoyama, TowerJazz Panasonic Semiconductor Co. Back-Illuminated 2.74 μm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e- Saturation Signal Yoshimichi Kumagai, Sony Semiconductor A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation Satoko Iida, Sony Semiconductor A 24.3Me- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging Maasa Murata, Tohoku University A HDR 98dB 3.2µm Charge Domain Global Shutter CMOS Image Sensor Arnaud Tournier, STMicroelectronics 1.5µm dual conversion gain, backside illuminated image sensor using stacked pixel level connections with 13ke- full-well capacitance a...
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