IEDM 2018 to be held on Dec. 1-5 in San Francisco publishes a list of accepted papers with an interesting image sensor stuff:
- High Performance 2.5um Global Shutter Pixel with New Designed Light-Pipe Structure
Toshifumi Yokoyama, TowerJazz Panasonic Semiconductor Co. - Back-Illuminated 2.74 μm-Pixel-Pitch Global Shutter CMOS Image Sensor with Charge-Domain Memory Achieving 10k e- Saturation Signal
Yoshimichi Kumagai, Sony Semiconductor - A 0.68e-rms Random-Noise 121dB Dynamic-Range Sub-pixel architecture CMOS Image Sensor with LED Flicker Mitigation
Satoko Iida, Sony Semiconductor - A 24.3Me- Full Well Capacity CMOS Image Sensor with Lateral Overflow Integration Trench Capacitor for High Precision Near Infrared Absorption Imaging
Maasa Murata, Tohoku University - A HDR 98dB 3.2µm Charge Domain Global Shutter CMOS Image Sensor
Arnaud Tournier, STMicroelectronics - 1.5µm dual conversion gain, backside illuminated image sensor using stacked pixel level connections with 13ke- full-well capacitance and 0.8e- noise
Vincent Venezia, Omnivision - Through-silicon-trench in back-side-illuminated CMOS image sensors for the improvement of gate oxide long term performance
Andrea Vici, La Sapienza University of Rome - High-Performance Germanium-on-Silicon Lock-in Pixels for Indirect Time-of-Flight Applications
Neil Na, Artilux Inc. - High Voltage Generation Using Deep Trench Isolated Photodiodes in a Back Side Illuminated Process
Filip Kaklin, The University of Edinburgh - CMOS-Integrated Single-Photon-Counting X-Ray Detector using an Amorphous-Selenium Photoconductor with 11×11-μm2 Pixels
Ahmet Camlica, University of Waterloo
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